Factory Lead Time  

12 Weeks

Mount  

Through Hole

Mounting Type  

Through Hole

Package / Case  

TO-251-3 Short Leads, IPak, TO-251AA

Number of Pins  

3

Transistor Element Material  

SILICON

Current - Continuous Drain (Id) @ 25℃  

17A Tc

Drive Voltage (Max Rds On, Min Rds On)  

4V 10V

Number of Elements  

1

Power Dissipation (Max)  

79W Tc

Turn Off Delay Time  

30 ns

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

2V @ 250μA

Operating Temperature  

-55°C~175°C TJ

Packaging  

Tube

Series  

HEXFET®

Published  

2004

JESD-609 Code  

e3

Part Status  

Active

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

3

ECCN Code  

EAR99

Resistance  

105mOhm

Terminal Finish  

Matte Tin (Sn) - with Nickel (Ni) barrier

Additional Feature  

AVALANCHE RATED, ULTRA LOW RESISTANCE

Voltage - Rated DC  

100V

Terminal Position  

SINGLE

Peak Reflow Temperature (Cel)  

260

Current Rating  

17A

Time@Peak Reflow Temperature-Max (s)  

30

Configuration  

SINGLE WITH BUILT-IN DIODE

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

52W

Case Connection  

DRAIN

Turn On Delay Time  

7.2 ns

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

105m Ω @ 10A, 10V

Input Capacitance (Ciss) (Max) @ Vds  

800pF @ 25V

Gate Charge (Qg) (Max) @ Vgs  

34nC @ 5V

Rise Time  

53ns

Vgs (Max)  

±16V

Fall Time (Typ)  

26 ns

Continuous Drain Current (ID)  

17A

Threshold Voltage  

2V

Gate to Source Voltage (Vgs)  

16V

Drain to Source Breakdown Voltage  

100V

Pulsed Drain Current-Max (IDM)  

60A

Dual Supply Voltage  

100V

Avalanche Energy Rating (Eas)  

150 mJ

Nominal Vgs  

2 V

Height  

6.22mm

Length  

6.7056mm

Width  

2.3876mm

REACH SVHC  

No SVHC

Radiation Hardening  

No

RoHS Status  

ROHS3 Compliant

Lead Free  

Lead Free